Infineon Launches OptiMOS™ 8 100V Power MOSFETs, Enabling High Power Density Applications

August 31, 2026 — Infineon Technologies AG has officially released its OptiMOS™ 8 100V power MOSFET technology. This new generation of devices is specifically optimized for applications with stringent on-resistance (RDS(on)) requirements, including motor control, battery protection, and battery backup units (BBU) for AI data centers.

Compared to the previous-generation OptiMOS™ 5, the new products achieve an RDS(on) reduction of up to 44%, enabling an 18% increase in peak current output capability for motor-drive inverters, while meeting the highest power density demands of AI data center BBU applications. The devices feature a tight ΔVGS(th) specification of less than 0.8V, combined with low transconductance characteristics, ensuring excellent current sharing when multiple transistors are paralleled — thereby improving system reliability and thermal performance.

The OptiMOS™ 8 100V series offers a variety of packaging options, including copper-clip TOLL packages and SuperSO8 5x6 packages, balancing high current-carrying capability with compact layout design to help engineers achieve more efficient power conversion within limited space. This technology further strengthens Infineon's leadership in the medium- and low-voltage power semiconductor segment, delivering solutions that combine performance and cost advantages for markets such as industrial drives, server power supplies, and energy storage systems. Samples and evaluation boards are available for order starting today.